| PART |
Description |
Maker |
| LY62L1025616LL-55SLE |
1024K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L102516 LY62L102516E LY62L102516GL LY62L102516 |
1024K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN |
Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位）闪存引导扇区闪存，CMOS 3.0伏，
Replaced by PTN78000W : 8VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| EDI8F321024C15MZC EDI8F321024C20MZC EDI8F321024C25 |
15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
|
White Electronic Designs
|
| MX29F080 29F080 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
From old datasheet system
|
Macronix 旺宏
|
| MN65702H |
Low Power 8-Bit, 3-Channel CMOS D/A Converter for Image Processing PARALLEL, 8 BITS INPUT LOADING, 0.03 us SETTLING TIME, 8-BIT DAC, PQFP48
Low Power 8-Bit 3-Channel CMOS D/A Converter for Image Processing
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| EN29F800T90TI EN29F800 EN29F800B45S EN29F800B45SI |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
|
ETC[ETC]
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| ST27C1001 |
1024K CMOS UV Erasable PROM
1024K ( 128K X 8 ) CMOS UV ERASABLE PROM
|
ST Microelectronics
STMicroelectronics
|
| CY62167DV20L CY62167DV20LL CY62167DV20LL-55BVI |
16-Mb (1024K x 16) Static RAM 1M X 16 STANDARD SRAM, 55 ns, PBGA48
16-Mb (1024K x 16) Static RAM 16 MB的（1024K × 16）静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
